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MOSFETs/DrMOS


Hier erhältst du Zugriff auf unsere Auswahl an MOSFETs und DrMOS.


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MOSFETs/DrMOS

ALPHA & OMEGA
AON6962
Datasheet/Datenblatt 30V Dual Asymmetric N-Channel MOSFET General Description Trench Power αMOS Technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant APPLICATIONS DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial

3 .99*
ALPHA & OMEGA
AON7702
Datasheet/Datenblatt 30V N-Channel MOSFET General Description SRFET™ AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

1 .99*
ALPHA & OMEGA
AONH36334
Datasheet/Datenblatt 30V Dual Asymmetric N-Channel MOSFET General Description Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant APPLICATIONS DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial

3 .99*
ALPHA & OMEGA
AOZ5029QI-5
DrMOS QFN Datasheet not available/Datenblatt nicht verfügbar

5 .99*
Magnachip
MDU1511RH
Datasheet/Datenblatt Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩGeneral DescriptionThe MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications.

3 .99*
Magnachip
MDV1525URH
Datasheet/Datenblatt Single N-channel Trench MOSFET 30V, 24A, 10.1mΩGeneral DescriptionThe MDV1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1525 is suitable for DC/DC converter and general purpose applications.

3 .99*
onsemi
NTMFS4C06BT1G
MOSFET - Power, Single N-Channel, SO-8 FL Datasheet not available/Datenblatt nicht verfügbar

1 .99*
onsemi
NTMFS4C09BT1G
MOSFET - Power, Single N-Channel, SO-8 FL Datasheet not available/Datenblatt nicht verfügbar

1 .99*
Niko-Sem
PEA28BA
N-Channel Enhancement Mode MOSFET Datasheet not available/Datenblatt nicht verfügbar

3 .99*
ROHM
RQ3E070BN
Datasheet/Datenblatt N-Channel 30V 7A Middle Power MOSFETFeaturesLow on - resistance.High Power Package (HSMT8).Pb-free lead plating ; RoHS compliant.Halogen Free.APPLICATIONSSwitching

1 .99*
Vishay
SiC654
Datasheet/Datenblatt 50 A VRPower® Integrated Power Stage DESCRIPTION The SiC654 and SiC654A are high frequency integrated power stage optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance with very low shutdown current. Packaged in Vishay’s 5 mm x 5 mm MLP package, SiC654 and SiC654A enable voltage regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilize Vishay’s latest TrenchFET® technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC654 and SiC654A incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap switch, and user selectable zero current detection to improve light load efficiency. The driver is also compatible with a wide range of PWM controllers, supports tri-state PWM, and 5 V / 3.3 V PWM logic. The device also supports PS4 mode to reduce power consumption when the system is in standby state. The SiC654 and SiC654A offer operating temperature monitoring, protection features, and warning flags that improve system monitoring and reliability. FEATURES Highly efficient- Thermally enhanced PowerPAK® MLP55-31L package - Vishay’s latest TrenchFET technology and low side MOSFET with integrated Schottky diode - Integrated, low impedance, bootstrap switch - Power MOSFETs optimized for 19 V input stage - Supports PS4 mode light load requirement with low shutdown supply current (5 V, 3 μA) - Zero current detection for improved light load efficiency Highly versatile - 5 V and 3.3 V PWM logic with tri-state and hold-off timer - 5 V DSBL#, ZCD_EN# logic with PS4 state support - High frequency operation up to 2 MHz Robust and reliable - Delivers in excess of 50 A continuous current, 70 A, peak (10 ms) and 100 A, peak (10 μs) - Over current protection - Over temperature flag - Over temperature protection - Under-voltage lockout protection - High side MOSFET short detection Effective monitorig and reporting - Accurate temperature reporting - Warnings and faults reporting flag Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Multi-phase VRDs for computing, graphics card and memory Intel core processor power delivery - VCORE, VGRAPHICS, VSYSTEM AGENT - VCCGI Up to 24 V rail input DC/DC VR modules

4 .99*
Vishay
SIS412DN-T1-GE3
Datasheet/Datenblatt N-Channel 30 V (D-S) MOSFETFEATURESTrenchFET® power MOSFET100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912APPLICATIONSNotebook PC- System power- Load switch

1 .99*
STMicroelectronics
STD3N62K3
Datasheet/Datenblatt N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFET in DPAK DESCRIPTION These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. FEATURES 100% avalanche testedExtremely high dv/dt capability  Very low intrinsic capacitance  Improved diode reverse recovery characteristics  Zener-protected APPLICATIONSSwitching applications

2 .99*
STMicroelectronics
STD5N62K3
Datasheet/Datenblatt N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFET in DPAK DESCRIPTION These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. FEATURES 100% avalanche testedExtremely high dv/dt capability  Very low intrinsic capacitance  Improved diode reverse recovery characteristics  Zener-protected APPLICATIONSSwitching applications

2 .99*